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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOT 223 Triac Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. * * * * * Sensitive Gate Trigger Current in Four Trigger Modes Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Devices Supplied on 1 K Reel MAC08BT1 Series * *Motorola preferred devices TRIAC 0.8 AMPERE RMS 200 thru 600 Volts CASE 318E-04 (SOT-223) STYLE 11 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Blocking Voltage(1) (1/2 Sine Wave, Gate Open, TJ = 25 to 110C) MAC08BT1 MAC08DT1 MAC08MT1 On-State Current RMS (TC = 80C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 25C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (t < 2.0 s) Average Gate Power (TC = 80C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum) IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg TL Symbol VDRM 200 400 600 0.8 10 0.4 5.0 0.1 -40 to +110 -40 to +150 260 Amps Amps A2s Watts Watts C C C Value Unit Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient PCB Mounted per Figure 1 Thermal Resistance, Junction to Tab Measured on Anode Tab Adjacent to Epoxy Symbol RJA RJT Max 156 25 Unit C/W C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 3-40 Motorola Thyristor Device Data MAC08BT1 Series ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Peak Repetitive Blocking Current (VD = Rated VDRM Gate Open) TJ = 25C TJ = 110C Maximum On-State Voltage (Either Direction) (IT = 1.1 A Peak, TA = 25C) Gate Trigger Current (Continuous dc) All Quadrants (VD = 7.0 Vdc, RL = 100 ) Holding Current (Either Direction) (VD = 7.0 Vdc, Gate Open, Initiating Current = 20 mA, Gate Open) Gate Trigger Voltage (Continuous dc) All Quadrants (VD = 7.0 Vdc, RL = 100 ) Critical Rate of Rise of Commutation Voltage (f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS On-State Current Duration = 2.0 mS, VDRM = 200 V, Gate Unenergized, TC = 110C, Gate Source Resistance = 150 , See Figure 10) Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110C, Gate Open, Exponential Method) Symbol IDRM -- -- VTM IGT IH -- -- -- -- -- -- -- -- 10 200 1.9 10 5.0 Min Typ Max Unit A A Volts mA mA VGT dv/dtc -- 1.5 -- -- 2.0 -- Volts V/s dv/dt 10 -- -- V/s 0.15 3.8 0.079 2.0 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 inches mm 0.091 2.3 0.244 6.2 0.984 25.0 BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY 0.096 2.44 0.059 1.5 0.096 2.44 0.059 1.5 0.096 2.44 0.472 12.0 Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 Motorola Thyristor Device Data 3-41 MAC08BT1 Series IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 10 R JA , JUNCTION TO AMBIENT THERMAL RESISTANCE, C/W 160 150 140 130 120 110 100 90 80 70 60 50 40 30 TYPICAL MAXIMUM DEVICE MOUNTED ON FIGURE 1 AREA = L2 PCB WITH TAB AREA AS SHOWN L 1.0 4 123 L 0.1 TYPICAL AT TJ = 110C MAX AT TJ = 110C MAX AT TJ = 25C 0.01 0 1.0 2.0 3.0 4.0 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 5.0 MINIMUM FOOTPRINT = 0.076 cm2 0 2.0 4.0 6.0 FOIL AREA (cm2) 8.0 10 Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area 110 110 100 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 90 80 70 60 50 40 30 20 0 0.4 0.1 0.2 0.3 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.5 MINIMUM FOOTPRINT 50 OR 60 Hz dc = 180 120 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 30 100 90 80 70 60 50 40 30 20 0 0.1 0.2 1.0 cm2 FOIL AREA 50 OR 60 Hz dc = 180 120 60 90 30 = CONDUCTION ANGLE 60 90 = CONDUCTION ANGLE 0.6 0.3 0.4 0.5 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.7 Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature 110 Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature 110 30 T(tab) , MAXIMUM ALLOWABLE TAB TEMPERATURE ( C) 105 dc 100 = 180 95 120 90 85 80 REFERENCE: FIGURE 1 = CONDUCTION ANGLE T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 100 90 80 70 4.0 cm2 FOIL AREA 60 50 dc = 180 120 30 60 90 = CONDUCTION ANGLE 60 90 0 0.1 0.6 0.7 0.3 0.4 0.5 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.2 0.8 0 0.1 0.3 0.4 0.5 0.6 IT(RMS), ON-STATE CURRENT (AMPS) 0.2 0.7 0.8 Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature Figure 7. Current Derating Reference: MT2 Tab 3-42 Motorola Thyristor Device Data MAC08BT1 Series 1.0 0.9 P(AV) , MAXIMUM AVERAGE POWER DISSIPATION (WATTS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.3 0.4 0.5 0.6 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.2 0.7 0.8 0.01 0.0001 0.001 0.01 0.1 1.0 t, TIME (SECONDS) 10 100 = 180 dc 90 60 = CONDUCTION ANGLE 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 120 30 0.1 Figure 8. Power Dissipation Figure 9. Thermal Response, Device Mounted on Figure 1 Printed Circuit Board 80 mHY LL MEASURE I TRIGGER CONTROL 75 VRMS, ADJUST FOR ITM, 60 Hz VAC CHARGE CHARGE CONTROL RS 56 1N4007 TRIGGER - 2 1N914 51 G 1 0.047 CS ADJUST FOR dv/dt(c) 200 V + 5 F NON-POLAR CL Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 10. Simplified Q1 (dv/dt)c Test Circuit 10 80 60 10 60 Hz 180 Hz 400 Hz COMMUTATING dv/dt dv/dt c , (V/ S) COMMUTATING dv/dt dv/dt c , (V/ S) 300 Hz ITM 110 100 tw f VDRM = 200 V + 2t1 w 1.0 1.0 VDRM (di dt) c I + 6f1000 TM 10 di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) 1.0 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (C) 110 Figure 11. Typical Commutating dv/dt versus Current Crossing Rate and Junction Temperature Figure 12. Typical Commutating dv/dt versus Junction Temperature at 0.8 Amps RMS Motorola Thyristor Device Data 3-43 MAC08BT1 Series 60 I GT , GATE TRIGGER CURRENT (mA) 600 Vpk TJ = 110C 50 STATIC dv/dt (V/ s) MAIN TERMINAL #2 POSITIVE 10 IGT3 IGT2 IGT4 IGT1 1.0 40 30 MAIN TERMINAL #1 POSITIVE 20 10 100 1000 RG, GATE - MAIN TERMINAL 1 RESISTANCE (OHMS) 10,000 0.1 -40 -20 40 60 80 0 20 TJ, JUNCTION TEMPERATURE (C) 100 Figure 13. Exponential Static dv/dt versus Gate - Main Terminal 1 Resistance Figure 14. Typical Gate Trigger Current Variation 6.0 5.0 4.0 3.0 2.0 1.0 0 -40 MAIN TERMINAL #2 POSITIVE VGT , GATE TRIGGER VOLTAGE (VOLTS) 1.1 IH , HOLDING CURRENT (mA) VGT3 VGT2 VGT1 VGT4 MAIN TERMINAL #1 POSITIVE -20 0 20 40 60 80 100 0.3 -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 15. Typical Holding Current Variation Figure 16. Gate Trigger Voltage Variation 3-44 Motorola Thyristor Device Data |
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